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DC biasing can cause transformers noise increasing, vibration intensified, local overheating and even damaged. 摘要直流偏磁会导致变压器噪音增大、振动加剧，可能引起变压器局部过热甚至损坏。
This module setup the output DC biasing voltage at VDD/2 whatever at different input biasing voltage. 放大器的共模反馈模块使得系统在不同的输入共模电平条件下输出信号偏置电压均稳定在VDD/2附近，并建立正常的系统直流工作点。
(17)DC biasing circuits for FETs; (17)场效电晶体直流偏压电路;
(8)DC biasing circuits for BJTs; (8)双极接合面电晶体直流偏压电路;
The dielectric constant decreased significantly under large DC bias level. 在较大的直流偏压场下，介电常数大幅度降低。
And the measured uncertainty in Vickers hardness testing was evaluated according to procedure without bias method and procedure with bias method. 利用无偏差估计方法和考虑硬度计偏差的方法对维氏硬度试验中的测量不确定度进行了评定。
The dielectric nonlinearity of the PMN-PZN-PT relaxor ferroelectric ceramics under DC bias was investigated. 在一定温度范围内，对PMN-PZN-PT系弛豫铁电陶瓷直流偏压下的介电非线性进行了研究。
Abstract: Powder core has high saturation flux density and excellent motion linearity of DC bias. 摘要：磁粉心具有较高的饱和磁通密度和较好的直流偏磁动态线性。
The f T is up to 7GHz at a DC bias of I C=40mA and V CE=8 V,which show high current handling capability. 在直流工作点 IC=4 0 m A ;VCE=8V测得 f T为 7GHz;表现出较大的电流处理能力 .
It is the key problem for studying the exciting current in the transformer under DC bias magnetization. 在直流偏磁条件下变压器励磁电流是研究变压器直流偏磁特性的关键。
The method seems good but it needs to be tried out. 这个方法似乎不错，但需要试验一下。
Applying Series Resistor to Restrain Power Transformer DC Biasing 抑制变压器直流偏磁的串接电阻措施
In this paper, it is explored that DC bias field induces SLFE material’s active piezoelectricity. 在利用偏置电场诱导细电滞回线材料的压电活性方面，本文进行了探索性的研究。
Ferrite orthogonal core (FOC) controllable reactor (CR) is varied by its DC bias magnetic field. 传统的正交铁心可控电抗器通过控制在正交铁心上的直流偏磁场间接控制交流磁场，调节交流等效电抗。
The main components in a test system may include DC bias, DC measurement, RF power meter, network analyzer, RF sources, and other instruments. 一个测试系统中的主要部分可能包括直流偏压、直流测量、RF功率计、网络分析仪、RF源，以及其它仪器。
Ideally suited for bypassing and coupling application circuits operating with low DC bias in the environment approaching to room temperature. 适用于要求大容量，使用温度范围接近于室温的旁路、耦合等，及低直流偏压电路中。
Firstly, the relationship among the thickness of dark space, DC bias and electrode area under RF discharge is discussed. 首先从射频放电中的暗区厚度、DC偏压及电极面积的关系，以及射频溅镀系统的阻抗匹配网路介绍。
Greatly different from previous works, the matching circuits and DC bias networks are bent many times, for minimizing the LNA. 与以往同类工作有很大不同，为了实现LNA小型化的目的，对匹配电路和直流偏置网络采用多次曲折线的形式。
I can't claim infallibility for this method. 我不敢说这方法绝对有效。
The DC bias shift caused by the pyroelectric effect of Lithium Niobate crystals is analyzed.Moreover, a physical model is proposed to estimate the DC bias shift. 分析了铌酸锂晶体的热释电效应可能对静态偏置点造成的影响，提出了一种用于估算这种影响的简化物理模型。